Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps

This article aims to provide deep insight into the physics of substrates for RF applications under large-amplitude signal excitations. The impact physical parameters on substrate-induced harmonic distortion is modeled and well understood, from a theoretical quantitative standpoint. formulates interplay between applied voltage (dc or RF), interface fixed charge, trapped charge in charge-balance analysis high-resistivity trap-rich (TR) substrates. A TCAD approach gives strong such semiconductor material properties substrate's effective resistivity linearity. First, static reveals how TR passivation overcomes parasitic surface conduction effect using concept Fermi-level pinning. Next, are analyzed response dynamic excitation signals. Using step functions pulse an MOS structure negative positive sheds light carrier dynamics. characteristic time constants associated with variations trap occupancy free densities discussed. Finally, sinusoidal signals considered analyze several types at various frequencies.